The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Dec. 15, 1999
Applicant:
Inventors:
Ebrahim Andideh, Portland, OR (US);
Larry Wong, Beaverton, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 ;
U.S. Cl.
CPC ...
H05H 1/24 ;
Abstract
A method for forming carbon doped oxide layers by chemical vapor deposition using a source gas that includes: (a) an alkyl-alkoxysilane having the formula (R,),(R,O),Si where R,and R,are lower alkyl groups and n is an integer between 0 and 3, inclusive, with the proviso that when R,and R,are methyl groups, n is not equal to 2; (b) a fluorinated alkoxysilane having the formula (R,O),SiF,where R,is a lower alkyl group and n is an integer between 1 and 3, inclusive, or a combination thereof.