The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Jan. 21, 2000
Christian Zistl, Dresden, DE;
Paul R. Besser, Austin, TX (US);
Eric M. Apelgren, Austin, TX (US);
Nicholas J. Kepler, Saratoga, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A semiconductor device includes a first dielectric layer, a plurality of conductive interconnections formed in the first dielectric layer, a patterned passivation layer formed above the conductive interconnections, and a second dielectric layer formed above and in contact with the passivation layer and the first dielectric layer. A method for forming a semiconductor device includes providing a base layer, forming a first dielectric layer over the base layer, forming a plurality of conductive interconnections in the first dielectric layer, forming a patterned passivation layer above the conductive interconnections, and forming a second dielectric layer above and in contact with the passivation layer and the first dielectric layer.