The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Jul. 27, 1999
Tony Chiang, San Jose, CA (US);
Bingxi Sun, Sunnyvale, CA (US);
Suraj Rengarajan, Sunnyvale, CA (US);
Peijun Ding, San Jose, CA (US);
Barry Chin, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The invention provides a method for forming a microelectronic device comprising: forming a first electrode; depositing an adhesion layer over the first electrode utilizing high density plasma physical vapor deposition, wherein the adhesion layer comprises a material selected from Ta, TaN,, W, WN,, Ta/TaN,, W/WN,, and combinations thereof, depositing a dielectric layer over the adhesion layer; and forming a second electrode over the dielectric layer. The invention also provides a microelectronic device comprising: a first electrode; a second electrode; a dielectric layer disposed between the first and second electrodes; and an adhesion layer disposed between the first electrode and the dielectric layer, wherein the adhesion layer comprises a material selected from Ta, TaN,, W, WN,, Ta/TaN,, W/WN,, and combinations thereof.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile