The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Oct. 10, 2000
King-Lung Wu, Tainan Hsien, TW;
Tzung-Han Lee, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a bottom electrode is described. A first dielectric layer having a first opening is formed over a substrate. The first opening exposes a portion of a conductive layer in the substrate. A first liner layer is formed on a sidewall of the first opening. A conductive plug is formed in the opening. A plurality of bit lines are formed next to the first opening. A second liner layer is formed over the substrate to cover the bit lines, the first liner layer, and the conductive plug. A node contact opening is formed in the second liner layer to expose a portion of the conductive plug. A second dielectric layer is formed over the substrate. A second opening is formed in the second dielectric layer to expose the node contact opening and a portion of the second liner layer. A conformal conductive layer is formed in the opening.