The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Jul. 27, 2000
Toshihiro Tanaka, Akiruno, JP;
Yutaka Shinagawa, Iruma, JP;
Kazuyoshi Shiba, Kodaira, JP;
Kazufumi Suzukawa, Ichikawa, JP;
Masamichi Fujito, Kodaira, JP;
Takayuki Oshima, Oume, JP;
Sonoko Abe, Higashiyamato, JP;
Kiyoshi Matsubara, Kiyose, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention proposes a non-volatile semiconductor storage, comprising a plurality of main bit lines, a plurality of sub bit lines connected to the main bit lines, and a plurality of memory cell arrays, each including a plurality of non-volatile semiconductor memory cells disposed like an array. Each of those memory cells has a source terminal, a drain terminal, and a control gate, and each source-drain path is connected to a sub bit line. Between a main bit line and a sub bit line connected to the main bit line is disposed the source-drain path of a first transistor, and the source-drain path of a second transistor is connected to the sub bit line.