The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Apr. 19, 2000
Other;
Abstract
A method to fabricate bottle-shaped deep trench into a semiconductor substrate. After a neck profile is formed, the chlorine gas at a predetermined flow rate is added to the etching plasma gas composition, while the flow rates of the plasma gases are increased by about 30% by volume, to create an enlarged lower portion of the deep trench. Preferably, the neck portion is etched using an etching composition which contains HBr, NF,, and (He/O,) provided at flow rates of about 87:13:35 sccm. The enlarged lower portion is etched using an etching composition which contains HBr, NF,, and (He/O,) provided at flow rates of about 113±12:17±2:46±5 sccm, and Cl,provided at a flow rate between 10 and 40 sccm. It was found that the width of the lower portion of the deep trench can be increased by 100% with minimum side effects such as polymer deposition in the plasma chamber, which could occur as result of substantially increased flow rate of HBr and/or NF,.