The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Jan. 27, 2000
Applicant:
Inventor:
Yen-Lin Ding, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/176 ;
Abstract
A method of forming a capacitor of a mixed-mode device is described. Trenches used for forming a trench-type capacitor are simultaneously formed in a provided substrate while forming a shallow trench isolation. A conductive region used as a lower electrode is formed by ion implantation. A gate oxide layer, used for dielectric film, and a polysilicon layer, used as a gate and an upper electrode, are formed over the substrate and over the trenches. A trench-type capacitor is thus formed.