The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Nov. 20, 2000
John Foster, Mountain View, CA (US);
Yue-Song He, San Jose, CA (US);
Jiahua Huang, San Jose, CA (US);
Adanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In the manufacture of an EPROM or EEPROM semiconductor device that includes a core region and a peripheral region, a nitride layer is formed over the core region and peripheral region, and an oxide layer is formed over the nitride layer. A layer of photoresist is provided over the oxide layer and is patterned to expose a portion of the oxide layer overlying the core region. A wet etch step is undertaken to remove the exposed portion of the oxide layer, using the patterned photoresist as a mask, and leaving exposed a portion of the nitride layer overlying the core region. After removal of the photoresist, the exposed portion of the nitride layer is etched by a wet etch step with hot phosphoric acid, using the pattered oxide layer as a mask.