The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Mar. 06, 2000
Hidenori Uehara, Tokyo, JP;
Nobutaka Nasu, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device includes an internal source voltage generating circuit (debooster circuit) provided between an external source voltage EV,and a ground voltage V,and for generating an internal source voltage IV,necessary to drive each of internal circuits in the semiconductor device, a booster circuit provided between the internal source voltage IV,and the ground voltage V,, for generating a boosted voltage V,higher than the internal source voltage IV,, and a capacitor provided between the boosted voltage V,and the ground voltage, for stabilizing the boosted voltage V,. The capacitor comprises a P type semiconductor substrate to which the ground voltage is applied, and an N type well region having therein a P type well region with a memory cell formed therein and to which the internal source voltage IV,is applied.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile