The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
May. 19, 2000
Applicant:
Inventors:
Chi-Fa Ku, Hsinchu Hsien, TW;
Jeenh-Bang Yeh, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 3/00 ; G02B 9/06 ; B05D 5/06 ; C03B 1/901 ; B29D 1/100 ;
U.S. Cl.
CPC ...
G02B 3/00 ; G02B 9/06 ; B05D 5/06 ; C03B 1/901 ; B29D 1/100 ;
Abstract
The invention proposes a method of predicting the curvature radius of the microlens. By adjusting a spin speed of spin coating and exposure energy during a photolithography step, a volume of the patterned microlens material layer is controlled. Then a lens-forming step is performed to transform the patterned microlens material layer into a microlens. After measuring a diameter of the microlens, the volume of the microlens material layer is multiplied by a contraction coefficient to calculate a volume of the microlens. Then the diameter and the volume of the microlens are used to calculate a curvature radius.