The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2001

Filed:

Jun. 11, 1999
Applicant:
Inventor:

Tsukasa Ohoka, Shiga, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract

A semiconductor device comprises a semiconductor layer on an insulator film that is contiguous to a semiconductor substrate. A component, such as a high-voltage diode, forming region is provided in the semiconductor layer and electrically insulated from other component forming regions. A substrate access region is provided in the semiconductor layer and electrically insulated from the component forming region. The substrate access region includes a conductive zone, which extends from the surface down through the semiconductor layer and insulator film to the substrate. A substrate contact is in contact with the conductive zone. The substrate contact and an anode contact of the diode are subject to the same potential.


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