The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2001

Filed:

Dec. 10, 1999
Applicant:
Inventors:

Yun Chi, Hsinchu, TW;

Feng Jen Lee, Taipei, TW;

Chao-Shiuan Liu, Taipei, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 1/500 ;
U.S. Cl.
CPC ...
C07F 1/500 ;
Abstract

A series of organometallic complexes of the general formula [M(CO),L,] was provided, wherein M is ruthenium or osmium metal, and L is a &bgr;-diketonate ligand RC(O)CHC(O)R,where each of R and R,is independently selected from the group consisting of atoms of the element, C, H, O and F. These ruthenium and osmium complexes possess enhanced volatility and thermal stability characteristics, and are very suitable for CVD applications. Also disclosed are CVD methods by using these ruthenium or osmium complexes as source reagents for deposition of Ru, Os, RuO,, OsO,, and other Ru- or Os-containing films such as mixed metal oxide materials BaRuO,, SrRuO,, Sr,RuO,and Bi,Ru,O,or bimetallic alloys Pt/Ru and Pd/Ru.


Find Patent Forward Citations

Chi, Yun. (2001). Organometallic ruthenium and osmium source reagents for chemical vapor deposition (U.S. Patent No. 6303809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6303809

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