The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
May. 06, 1999
Applicant:
Inventor:
Jau-Hone Lu, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of fabricating a contact window of a semiconductor device is described in which a conductive layer is used to cover the boundary of the neighboring isolation structure of the source/drain region, or to also cover the source/drain region. An insulation layer is formed on the entire substrate. The insulation layer is then defined to form a contact window, exposing the source/drain region or exposing the conductive layer located on top of the source/drain region.