The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Sep. 13, 1999
Applicant:
Inventors:
Sandeep A. Desai, San Jose, CA (US);
Scott Brad Herner, Palo Alto, CA (US);
Steve G. Ghanayem, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. A layer of silicon is deposited on the walls of an opening. In one aspect, the opening is filled by depositing electrically conductive material directly over the silicon. In another aspect, the layer of silicon is exposed to a precursor gas that reacts with the silicon so as to (a) form a volatile material that consumes substantially all of the silicon and (b) deposit an electrically conductive material within the opening.