The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 16, 2001

Filed:

Mar. 20, 2000
Applicant:
Inventors:

Satoshi Shimonishi, Kawasaki, JP;

Takanori Matsumoto, Yokkaichi, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract

A method for manufacturing a semiconductor device capable of improving properties during etching without degrading original properties of a doped oxide film as a hard mask includes a step of baking the doped oxide film after patterned but prior to etching. Thereby, changes in configuration or shape upon etching caused by absorption of moisture is prevented.


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