The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Jun. 25, 1999
Wei-Wu Liao, Jui-Feng Chen, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for fabricating a borderless contact is disclosed. The method includes providing a substrate with an active region and a trench formed therein. Then, the trench is etched to stop at a depth. A conformal stop layer is deposited on the substrate. As a key step, the stop layer is etched to form spacer against top corner of the trench. A dielectric layer is formed on the substrate. Then, an opening is etched in the dielectric layer to form a borderless contact, wherein the opening overlies both a portion of the trench and a portion of the active region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile