The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Oct. 21, 1999
Robin Lee, Hsinchu Hsien, TW;
Anchor Chen, Pingtung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A fabrication method for a dynamic random access memory is described, wherein after the formation of the shallow trench in the substrate to define the active region, an isolation structure is formed in the shallow trench. A first conductive layer is formed to cover the substrate and to fill the shallow trench. A portion of the first conductive layer is removed, leaving only the portion in the shallow trench to form a bit line in the shallow trench. Thereafter, an elevated portion is formed on the substrate, connecting the bit line to the active region where the source region is to be formed. A transistor is then formed in the active region. The area of the source region of the transistor includes the substrate under the elevated part, wherein the source region is connected to the second conductive layer. A dielectric layer is further formed covering the substrate, followed by forming a capacitor on the dielectric layer, wherein the capacitor passes through the dielectric layer to connect with the transistor.