The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Dec. 12, 1996
Applicant:
Inventors:
Toshio Itoh, Palo Alto, CA (US);
Mei Chang, Saratoga, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ;
Abstract
A multiple step chemical vapor deposition process for depositing a tungsten silicide layer on a substrate. A first step of the deposition process includes a pretreatment step in which WF,is introduced into a deposition chamber. Next, the introduction of WF,is stopped and a silicon-containing gas, e.g., SiH,, is introduced into the chamber. Finally, during a third step, the SiH,flow is stopped and DCS and WF,are introduced into the chamber to deposit a tungsten silicide layer on the substrate.