The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Jul. 28, 1998
Applicant:
Inventors:
Jacob Chen, Hsinchu, TW;
Tz-Guei Jung, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1265 ;
U.S. Cl.
CPC ...
H01L 2/1265 ;
Abstract
A method of manufacturing wells comprises the step of providing a p-type substrate and then sequentially forming a p-well and n-well with low dosage in the p-type substrate. Thereafter, energy is used to dope n-type ions into the p-well. The triple well formed in the present invention has low dosage ions, hence the DRAM formed on the triple well in subsequent process can have a faster refresh time.