The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2001
Filed:
Oct. 26, 1999
Applicant:
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract
A photo mask of a semiconductor device includes a transmission preventing layer formed of a molybdenum alloy, which is a solid solution of a metal atom such as chrome in molybdenum, on a light transmitting substrate. Also, the molybdenum alloy may be a molybdenum vanadium alloy, a molybdenum niobium alloy, a molybdenum tantalum alloy, or a molybdenum tungsten alloy, which is a solid solution of vanadium, niobium, tantalum, or tungsten in molybdenum, respectively. The photo mask provides high resolution during a photolithography process by obtaining a thinner transmission preventing layer.