The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Dec. 28, 1999
Yukihiko Maejima, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention provides a method of patterning top and bottom electrodes of a capacitor. The method comprises the steps of: selectively forming a first mask made of a first material which has a barrier property to hydrogen on a top electrode of the capacitor; selectively etching a top electrode layer and a capacitive dielectric film by use of the first mask; without removing the first mask from the top electrode, selectively forming a second mask made of a second material which has a barrier property to hydrogen so that the second mask covers the first mask, the top electrode and the capacitive dielectric film and also covers a bottom electrode layer; and selectively etching a bottom electrode layer.