The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Aug. 16, 1999
Youngjin Park, Poughkeepsie, NY (US);
Heon Lee, Fishkill, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
In accordance with the present invention, a method for expanding holes for the formation of stacked capacitors is described and claimed. The method includes the steps of providing a planarized dielectric layer for forming bottom electrodes of the stacked capacitors, forming a first dielectric layer on the planarized dielectric layer, forming a second dielectric layer on the first dielectric layer. The second dielectric layer is selectively etchable relative to the first dielectric layer. The steps of etching the second dielectric layer to form holes for forming the bottom electrodes and isotropically etching the second dielectric layer to expand the holes for forming the bottom electrodes are also included.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile