The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Feb. 01, 1999
Hwi-Huang Chen, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a flash memory device is described. A substrate at least comprises a memory region and a peripheral circuit region. A stacked gate is formed on the memory region. The stacked gate comprises a tunneling oxide layer, a floating gate and a control gate. A capacitor is formed on the peripheral circuit region. A dielectric layer is formed over the substrate to cover the peripheral circuit region. A thin spacer is formed on the sidewall of the stacked gate. A doped region is formed in the memory region by ion implantation. A thermal process is performed to drive the dopant in the doped region into the substrate and to oxidize a part of the floating gate above the edge of the tunneling oxide layer.