The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
May. 18, 1999
Masaro Tamatsuka, Gunma-ken, JP;
Katsuhiko Miki, Gunma-ken, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
There are disclosed a method for producing a silicon single crystal wafer for particle monitoring, which comprises growing a silicon single crystal ingot doped with nitrogen by the Czochralski method, and processing the single crystal ingot into wafers to produce the silicon single crystal wafer for particle monitoring; and a silicon single crystal wafer for particle monitoring, which is a silicon single crystal wafer for particle monitoring obtained by processing a silicon single crystal ingot into wafers, which ingot has been produced by the Czochralski method while doped with nitrogen. The method of the present invention can produce silicon single crystal wafers for particle monitoring having few pits on wafer surfaces with high productivity.