The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Oct. 06, 1999
Applicant:
Inventors:
Luke Zhang, Santa Clara, CA (US);
Ruiping Wang, Fremont, CA (US);
Ida Ariani Adisaputro, San Jose, CA (US);
Kwang-Soo Kim, Mountain View, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A substrate,is placed in a process zone,of a process chamber,process gas is introduced into the process zone,and an energized gas is formed in the process zone,First process conditions are set to form etch-passivating deposits onto a surface,of the substrate,Second process conditions are set to etch the surface,of the substrate,The etch-passivating deposits formed before the etching process improve etching uniformity and reduce etch-rate microloading.