The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Dec. 16, 1998
Applicant:
Inventor:
Ming-Tsung Tung, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18224 ;
U.S. Cl.
CPC ...
H01L 2/18224 ;
Abstract
A method of forming an improved bipolar junction device structure. By forming a well region around the emitter terminal, the area of distribution of ions within the emitter terminal of a vertical bipolar junction transistor is enlarged. Furthermore, by forming a separate well region around the emitter terminal and the collector terminal, the area of distribution of ions within the emitter terminal and the collector terminal of a lateral bipolar junction transistor is also enlarged.