The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Jun. 18, 1999
Gary Steven Tompa, Somerville, NJ (US);
Structured Materials Industries Inc., Piscataway, NJ (US);
Abstract
A Metal Organic Chemical Vapor Deposition (MOCVD) system particularly suitable for use at low deposition pressures and high or low temperatures. The system includes a reactor chamber having a reactant gas distribution unit (showerhead) which may be height adjustable having a temperature control chamber, for controlling the temperature of the reactants, a chamber for providing a uniform flow of carrier gas and a gas distribution chamber which includes baffling which can preclude gas phase mixing of the reactants. The gas distribution unit also includes an integral plasma generating electrode system for providing plasma enhanced deposition with controlled distribution of reactants. Also located in the reactor chamber is a temperature control unit for heating and/or cooling the wafers and a non-levitating rotating wafer carrier.