The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Nov. 08, 1999
Morteza Afghahi, Mission Viejo, CA (US);
Yueming He, Chandler, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An embodiment of the invention is directed to a metal oxide semiconductor field effect transistor (MOSFET) comparator, which includes a differential amplifier having first and second inputs and first and second outputs. A first offset storage device is connected to the first input at one end and receives a first input signal of the comparator at another end. A second offset storage device is connected to the second input at one end and receives the first input signal during an autozero time interval and a second input signal of the comparator thereafter. During the autozero time interval, offset voltages are stored. Thereafter, the offsets are cancelled when the input signals are applied to their respective storage device. In a particular embodiment of the invention, the amplifier features a dual purpose load that causes the amplifier to first preamplify and then regeneratively drives the outputs.