The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Aug. 21, 2000
Salman Akram, Boise, ID (US);
Akram Ditali, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
One aspect of the invention provides a transistor including semiconductive material and a transistor gate having gate oxide positioned therebetween. The gate has opposing gate edges and a central region therebetween, and the gate oxide has opposing edges substantially laterally aligned with the opposing gate edges. A source is formed laterally proximate one of the gate edges and a drain is formed laterally proximate the other of the gate edges. At least one of fluorine or chlorine is concentrated in the gate oxide layer between the semiconductive material and the transistor gate more proximate at least one of the gate edges than the central region. Another aspect of the invention provides a transistor comprising semiconductive material and a transistor gate having gate oxide positioned therebetween. The gate has opposing gate edges and a central region therebetween, and the gate oxide has opposing edges substantially laterally aligned with the opposing gate edges. A source is formed laterally proximate one of the gate edges and a drain is formed laterally proximate the other of the gate edges. At least one of fluorine or chlorine is concentrated in the gate oxide layer between the semiconductive material and the transistor gate more proximate at least one of the gate edges than the central region.