The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Sep. 25, 1998
Applicant:
Inventors:
Linda T. Romano, Sunnyvale, CA (US);
Daniel Hofstetter, Sunnyvale, CA (US);
Thomas L. Paoli, Los Altos, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 ;
U.S. Cl.
CPC ...
H01S 5/00 ;
Abstract
Group III-V nitride semiconductors are used as light emitters for optoelectronic devices. To provide the desired range of bandgaps and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because poor lattice mismatch between group III-V nitride alloys. Thus, a plurality of gratings or grooves are formed in the group III-V nitride layer in order to relieve strain between the group III-V nitride layer and the active region. The plurality of gratings allows segregation of In in a manner that optimizes the wavelength of light produced.