The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2001

Filed:

Jul. 10, 1997
Applicant:
Inventors:

Yohei Ishikawa, Kyoto, JP;

Koichi Sakamoto, Otsu, JP;

Sadao Yamashita, Kyoto, JP;

Takehisa Kajikawa, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01P 3/18 ; H01L 2/9812 ;
U.S. Cl.
CPC ...
H01P 3/18 ; H01L 2/9812 ;
Abstract

A drain electrode and a source electrode are provided for an intrinsic device section on a GaAs substrate with a gate electrode placed therebetween. Almost all or substantial parts of the GaAs substrate is covered by an extending source electrode extending from the source electrode. A belt-shaped extending drain electrode is provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an output-side microstripline is formed. A belt-shaped extending gate electrode is also provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an input-side microstripline is formed.


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