The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Mar. 22, 2000
Hiroshi Takahashi, Ohi-machi, JP;
Yutaka Toyonoh, Tokyo, JP;
Yasumasa Ikezaki, Matsudo, JP;
Tohru Urasaki, Yokohama, JP;
Akihiro Takegama, Tokyo, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The purpose of this invention is to ensure an active use of the inverse short-channel effect in the ratio circuit and to guarantee stable operation at low power source voltage. In this ratio circuit, N-channel MOS transistor,of CMOS circuit,on one side forms the drive element, while P-channel MOS transistor,of CMOS circuit,on the other side forms the load element. Said N-channel MOS transistor,on the drive side and P-channel MOS transistor,on the load side have their drain terminals electrically connected to each other through transfer gate,made of N-channel MOS transistor. MOS transistor,on the drive side has a single channel CHa with the inverse short-channel effect. MOS transistor,on the load side has plural, e.g., two, channels CHb,and CHb,, connected in tandem, each of which displays the inverse short-channel effect.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile