The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Nov. 15, 1999
Takashi Hatai, Neyagawa, JP;
Takuya Komoda, Sanda, JP;
Yoshiaki Honda, Kyoto, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshifumi Watabe, Tondabayashi, JP;
Tsutomu Ichihara, Hirakata, JP;
Yukihiro Kondo, Hirakata, JP;
Nobuyoshi Koshida, Kodaira, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
A field emission type electron source,is provided with an n-type silicon substrate,a strong field drift layer,formed on the n-type silicon substrate,directly or inserting a polycrystalline silicon layer,therebetween, and an electrically conductive thin film,which is a thin gold film, formed on the strong field drift layer,Further, an ohmic electrode,is provided on the back surface of the n-type silicon substrate,Hereupon, electrons, which are injected from the n-type silicon substrate,into the strong field drift layer,drift in the strong field drift layer,toward the surface of the layer, and then pass through the electrically conductive thin film,to be emitted outward. The strong field drift layer,is formed by making the polycrystalline silicon,formed on the n-type silicon substrate,porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.