The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Mar. 18, 1999
Ming-Tsung Tung, Hsin-Chu Shian, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A structure for forming a laterally diffused metal-oxide semiconductor is disclosed. The structure will include the following portions. They are a semiconductor layer with a conductivity type, a field insulating region into the semiconductor layer, a gate electrode formed over at least a portion of a channel region and insulated therefrom. The first drain region without an oxide top surface is formed beside one side of the gate electrode into the semiconductor layer. A second drain region is formed in the semiconductor layer. Also, a lightly doped portion borders the channel region and the neighbouring field insulating region. The main portion neighbors the oxide top surface and is spaced from the channel region by the lightly doped portion. The main portion has a second doping concentration that is less than the first doping concentration. The deep portion has a third doping concentration that is less than the second doping concentration.