The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2001

Filed:

Apr. 26, 2000
Applicant:
Inventor:

Yoshitake Kato, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

A stacked capacitor includes a top electrode, a capacitor insulator film made of BST, and a bottom electrode having a hollow cylindrical shape and connected through a contact plug to a diffused region of a silicon substrate. The bottom electrode includes a barrier layer, a first electrode layer and a second electrode layer, wherein the first and the second electrode layers are deposited on the barrier layer, followed by patterning of the second electrode layer for forming a hollow therein. The contact resistance between the bottom electrode and the contact plug is low due to excellent crystalline orientation alignment of the first electrode layer and thus prevention of oxidation of the contact plug during deposition of the BST film.


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