The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Aug. 19, 1998
Applicant:
Inventors:
Tue Nguyen, Vancouver, WA (US);
Lawrence J. Charneski, Vancouver, WA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B08B 3/12 ; B44C 1/22 ;
U.S. Cl.
CPC ...
B08B 3/12 ; B44C 1/22 ;
Abstract
A method is provided to clean the interior surfaces, and especially the wafer chuck, of a metal vapor deposition chamber. The method takes advantage of the fact that the chamber controls the introduction and removal of chemical atmospheres, and the temperature inside the chamber. The method first oxidizes the surface to be cleaned with an oxygen plasma, and then removes the oxide products as a vapor with the use of Hhfac. The oxidization is controlled through the use of oxygen atmosphere, temperature, and radio frequency power levels. In this manner, the wafer chuck is cleaned of deposition byproducts without disassembly of the chamber.