The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Mar. 09, 2000
Gary Hong, Hsin-Chu, TW;
United Microelectronics, Corp., Hsinchu, TW;
Abstract
A flash memory structure comprises a first polysilicon layer above a semiconductor substrate; a thin dielectric layer above the first polysilicon layer; and a second polysilicon layer across and above the dielectric layer and the substrate, wherein the second polysilicon layer has a linear shape when viewed from the top. The memory structure further comprises a drain region in the semiconductor substrate on one side of the second polysilicon layer; a trench isolation structure for insulating from neighboring devices; a buried metallic layer located inside a portion of the trench isolation structure close to the upper surface of the substrate; and a common source region located on the other side of the first polysilicon layer just opposite the drain region such that the common source region at least includes a source region and a buried metallic layer alternately linked together.