The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Feb. 03, 1999
Akihiko Ishibashi, Osaka, JP;
Yuzaburo Ban, Osaka, JP;
Yoshihiro Hara, Osaka, JP;
Nobuyuki Uemura, Osaka, JP;
Masahiro Kume, Shiga, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH,, TMG, and hydrogen for carrier are supplied at the rates of 10 &mgr;mol/min., 2.5 L/min., and 2 L/min., respectively to the semiconductor substrate at a temperature of 1090° C. by using MOVPE, thereby a buffer layer which consists of single crystal AlN and has a thickness of 15 nm being grown on the main surface of the semiconductor substrate. After lowering the temperature to 800° C., TMA, TMG, TMI, and NH,are supplied at the rates of 0.2 &mgr;mol/min., 2 &mgr;mol/min., 20 &mgr;mol/min., and 5 L/min., respectively, thereby a single crystal layer which consists of AlGaInN being grown on the buffer layer.