The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Dec. 16, 1998
Applicant:
Inventors:
William A. Wojtczak, San Jose, CA (US);
Long Nguyen, Milpitas, CA (US);
Stephen A. Fine, Peabody, MA (US);
Assignee:
Advanced Technology Materials, Inc., Danbury, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 1/300 ; C09K 1/308 ; C09K 1/306 ; H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
C09K 1/300 ; C09K 1/308 ; C09K 1/306 ; H01L 2/1302 ; H01L 2/1461 ;
Abstract
The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.