The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Mar. 29, 1999
Applicant:
Inventor:
Chingfu Lin, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method for planarizing a polysilicon layer is described. A polysilicon layer is etched with an oxygen-based gas and a halogen-based gas. The oxygen-based gas comprises an nitrogen oxide oxygen gas. The nitrogen oxide gas includes NO, NO,, N,O, or the combination thereof. The halogen-based gas includes a F, Cl, Br., I, NF,, SF,, Cl,, HCl, SiCl,, fluorocarbon, or a combination thereof. The fluorocarbon includes CF,, CHF,, CH,F,, CH,F, or the like.