The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Dec. 30, 1998
Liang-Choo Hsia, Hsinchu Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating an improved spacer comprising the steps of providing a semiconductor substrate that has a gate already formed thereon. A PNO spacer is formed on a sidewall of the gate. The method of forming the PNO spacer comprises first forming a PNO layer on the conductive layer and the semiconductor, and performing an anisotropic etching step on the PNO layer to form the PNO spacer. The step of forming the PNO layer includes chemical vapor deposition (CVD) using PH,, O,, NH,and N,as reagents. The step of etching the PNO layer includes plasma etching using CF,+O,as plasma source. The material of the PNO spacer is a chemical compound P,N,O,containing phosphorous (P), nitrogen (N) and oxygen (O) and does not contain silicon. Therefore, the PNO spacer can avoid erosion during etching and does not react with Ti during the Salicide process.