The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Dec. 18, 1998
Karthik Vasanth, Dallas, TX (US);
Mahalingam Nandakumar, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention comprises a method of determining the thermal straggle of microelectronic devices having a pocket dopant implant that is formed under substantially the same doping conditions. The method comprises measuring the operating characteristics of each device (,) and obtaining a one-dimensional doping profile of dopant ions in the devices (,). A total lateral straggle of the dopant ions in the devices is determined in response to the operating characteristics and the one-dimensional doping profile of the dopant ions (,). An as-implanted straggle of the dopant ions in the devices is determined in response to the doping conditions (,). A thermal straggle of the dopant ions is calculated utilizing the as-implanted straggle and the total lateral straggle (,).