Method for production of multi-layered epitaxially grown crystal and apparatus therefor

Abstract

A used melt receptacle,, a holder,for the alignment of crystalline substrates and a melt receptacle,are piled up in this order along a vertically extending central axis. A plurality of melt reservoirs,to,for different kinds of melts are disposed in the melt receptacle,concentrically about the central axis, while a plurality of used melt reservoirs are disposed in the used melt receptacle,in the same way. The supply of each melt from the corresponding melt reservoir,to,to the receiving cavity,of the holder,is changed by a cover,in which a melt supply hole,is formed, rotatable together with the holder,. The melt used for crystal growth is discharged from the holder,to the used melt receptacle,through a cover,having used melt dropping holes,to,. Since the melt fills the receiving cavity,while partially remaining in the corresponding melt reservoir,to,, neither oxide films nor microcrystals are introduced into the receiving cavity,. Hereby, a multi-layered crystal grows on the surface of each crystalline substrate without the harmful influence of the oxide films and the microcrystals.