The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2001

Filed:

Jan. 16, 1998
Applicant:
Inventors:

Yoshiyuki Ishigaki, Hyogo, JP;

Hiroki Honda, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/7108 ; H01L 2/711 ; H01L 2/702 ; B11C 1/140 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/7108 ; H01L 2/711 ; H01L 2/702 ; B11C 1/140 ;
Abstract

According to a semiconductor device and a method of manufacturing the same, a storage node has an increased capacity, and a resistance against soft error is improved. A GND interconnection is formed on a first interconnection layer including storage node portions with a dielectric film therebetween. Thereby, the storage node portions, the dielectric film, and the GND interconnection form a capacity element of the storage node portion. The first interconnection layer is arranged symmetrically around the center of the memory cell, and a plurality of memory cells having the same layout and neighboring to each other are arranged along the word lines.


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