The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2001

Filed:

Nov. 25, 1998
Applicant:
Inventors:

Tijana Rajh, Naperville, IL (US);

Natalia Meshkov, Downers Grove, IL (US);

Jovan M. Nedelijkovic, Belgrade, YU;

Laura R. Skubal, West Brooklyn, IL (US);

David M. Tiede, Elmhurst, IL (US);

Marion Thurnauer, Downers Grove, IL (US);

Assignee:

The University of Chicago, Chicago, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/906 ; H01L 2/912 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/906 ; H01L 2/912 ;
Abstract

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.


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