The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Jul. 26, 1999
Brian McMillin, Fremont, CA (US);
Huong Nguyen, Danville, CA (US);
Michael Barnes, San Francisco, CA (US);
Butch Berney, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring and a secondary gas ring for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors attached to the primary gas ring which inject gas into the chamber, directed toward the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.