The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Nov. 24, 1998
Yoshiyuki Ishigaki, Hyogo, JP;
Yasuhiro Fujii, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In an access transistor formed on a silicon substrate, its drain region is formed of n,type and n,type drain regions and its source region is formed of n,type and n,type source regions. In a driver transistor, its source region is formed of n,type and n,type source regions and its drain regions is formed of n,type and n,type drain regions. The n,+type source region is formed deeper than the n,type drain region. Accordingly, a semiconductor device ensuring improvement in a static noise margin while suppressing increase in manufacturing cost is provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile