The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Nov. 20, 1998
Applicant:
Inventors:
Somnath S. Nag, Saratoga, CA (US);
Gregory B. Shinn, Dallas, TX (US);
Girish A. Dixit, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
A low-temperature pre-metal dielectric deposition process using phosphine-based chemistry in a high-density plasma chemical-vapor deposition technique. The process uses a phosphorous-doped oxide of up to 3.5 percent (wt) deposited at less than 350 degrees C. capable of filling 0.4 micron spaces between poly-silicon gates without microvoids.