The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Dec. 30, 1999
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1322 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1322 ; H01L 2/1336 ;
Abstract
A fabrication method for an oxide layer with reduced interface-trapped charges, which is applicable to the fabrication of a gate oxide layer of a flash memory device, is described. The method includes conducting a first inert ambient annealing process, followed by growing an oxide layer on the silicon substrate. A second inert ambient annealing process is then conducted on the oxide layer. Carbon ions are then incorporated into the interface between the oxide layer and the silicon substrate, followed by a third ambient annealing process.