The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Nov. 08, 1999
Tzu-Shih Yen, Hsinchu, TW;
Erik S. Jeng, Hsinchu, TW;
Hao-Chieh Liu, Taipei, TW;
Hung-Yi Luo, Sunchung, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A method for making self-aligned contacts on a semiconductor substrate using a hard mask. After the transistor is formed, a blanket insulating layer is formed on said semiconductor substrate. A hard mask having openings on the blanket insulating layer is formed over the insulating layer. The openings overlay the source/drain region and part of the gate electrode structure. Using the patterned hard mask, the insulating layer is etched to the gate electrode protecting layer. Then self-aligned contacts is completed by etching the insulating layer to expose the source/drain regions using the gate electrode protecting layer and the insulating sidewall spacers as the mask.